Zn doping induced band gap widening of Ag2O nanoparticles
نویسندگان
چکیده
منابع مشابه
Aligning the band gap of graphene nanoribbons by monomer doping.
Silicon-based field-effect transistors (FETs) are the building blocks of modern digital logic circuitry and therefore part of virtually every electronic device available today. Over the past decades, continuous downscaling of existing designs has met the rising performance requirements, but as the size of FETs approaches the regime of atomic structures, new concepts are required to maintain the...
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A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....
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Mn0.8Zn0.2Fe2-xDyxO4 (where x= 0, 0.025, 0.05, 0.075, 0.1) ferrite nanoparticles were synthesized by auto- combustion sol-gel method for the first time in this study. The effect of Dy-doping on the structural and magnetic properties of the produced specimens was examined using the X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), vibrating sample magnetometery (VSM), and ...
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ژورنال
عنوان ژورنال: Journal of Alloys and Compounds
سال: 2020
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2020.154127